Surface plasmons mediated energy transfer from a semiconductor quantum well to an organic overlayer
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چکیده
منابع مشابه
Coupling of InGaN quantum-well photoluminescence to silver surface plasmons
The coincidence in excitation energy between surface plasmons on silver and the GaN band gap is exploited to couple the semiconductor spontaneous emission into the metal surface plasmons. A 3-nm InGaN/GaN quantum well ~QW! is positioned 12 nm from an 8-nm silver layer, well within the surface plasmon fringing field depth. A spectrally sharp photoluminescence dip, by a factor '55, indicates that...
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ژورنال
عنوان ژورنال: The European Physical Journal B
سال: 2014
ISSN: 1434-6028,1434-6036
DOI: 10.1140/epjb/e2013-40620-3